MICRORELIEF
GENERATION TECHIQUES DEVELOPED
AND USED AT IPSI RAS
|
Technique
|
Equipment
|
Materials
|
Step
height
|
|
Liquid etching
|
ÌÈÈ-4, ÌÊÄ
profi-lometer - profilograph
|
Glass
|
0,1 - 5
mm
|
|
Plasmo-chemical
etching
|
ÓÒÏ ÏÄÝ
0125-009,
ÌÈÈ-4, ÑÇÌ, ÌÊÄ |
Glass, quartz,
Si, sapphire
|
0,1 - 5
mm
|
|
Layer-wise
photoresist growth
|
Centrifuge,
ÌÈÈ-4, ÌÊÄ
|
ÔÏ051, ÔÏ351
|
0,2 - 1,5
mm
|
|
Layer-wise
etching of thin films
|
ÓÂÍ-2Ì-2,
ÌÈÈ-4,
ÌÊÄ, "ÎÐÀÒÎÐÈß" |
Cr, Cu,
Al, Nb, Ta
|
0,1 - 0,5
mm
|
|
Oxidation
of thin metal film
|
"ÎÐÀÒÎÐÈß",
ÌÈÈ-4,
ÑÇÌ, ÌÊÄ |
Nb, Ti,
Al
|
0,06 - 1,0
mm
|
|
Dark growth
in LPPC layers
|
ÊÓ ÆÔÏÊ,
profilometer - profilographv |
LPPC
|
1,0 - 100
mm
|
|
Physical
recordingü
|
Holographic
unit ÓÈÃ-22
|
As2S3,
As2Se3,
holographic plates |
0,1 - 10
mm
|