MULTI-LEVEL-MICRORELIEF-BASED
DOES
DEVELOPED AND FABRICATED AT IPSI RAS
|
Focusing
DOE type
|
Wave- |
Aperture,
mm |
Focal
length,
mm |
Focal
line size
|
Number
of phase quantiza-tion levels
|
Fabrication
technique
|
|
“Segment”*
|
10,6
|
16
|
250
|
6 mm
|
5
|
PL
|
|
“Segment”*
|
10,6
|
40
|
400
|
10 mm
|
8
|
PL
|
|
“Segment”*****
|
10,6
|
40
|
500
|
10 mm
|
8
|
PCE
|
|
“Spot”*
|
10,6
|
10
|
250
|
-
|
8
|
UCE
|
|
“Segment”**
|
10,6
|
6
|
80
|
5 mm
|
5
|
PL
|
|
“Ring”******
|
10,6
|
12
|
400
|
12 mm
|
8
|
UPG
|
|
“Ring”**
|
10,6
|
20
|
100
|
4 mm
|
8
|
PL
|
|
“Twin-spots”**
|
10,6
|
20
|
100
|
3 mm
|
8
|
PL
|
Ěŕňĺđčŕë ďîäëîćęč:
* - copper
** - glass
*** - fused silica
**** - silicon
***** - polymethylacrylate
****** - photoresist coated with Al/ Ag-filmPCE- plasmo-chemical etching
UPG - uniform photoresist growth
UCE - uniform copper etching
PL - photolithography˙